Deutsch Espanol Francais Italiano Portugues Japanese Korean Arabic Russian

+86 755 61167757 [email protected]

Facebook
Twitter
Youtube
LinkedIn
Pinterest

MIC MOSFET, China Power MOSFET Manufacturer Factory Suppliers
  • Home
  • About Us
  • Products
    • Infineon IRF / IRFR / IRL Series MOSFET Alternative Equivalent
    • Fairchild FQP / FQPF / FDD Series MOSFET Alternative Equivalent
    • AOS AO / AOD / AOI / AON Series MOSFET Alternative Equivalent
    • Other Brand MOSFET Alternative
    • MIC Standard MOSFET Model
    • MOSFET Typical Application
    • Package Outline Drawings
  • BLOG
    • MOSFET Feature Application
    • MOSFET Industry News
  • Alternative
  • Inquiry
  • Contact Us
  1. Home
  2. Products
  3. MOSFET Typical Application
  4. Application of MOSFET In Switching power
  • Application of MOSFET In Switching power supply & Adapter

Application of MOSFET In Switching power supply & Adapter

Inquiry Send Email

Description

Application of MOSFET In Switching power supply & Adapter

MOSFET TYPICAL APPLICATION: Switching power supply & Adapter


Part Number Description Package
MIC-FM13NG N Channel/500V/13A/480mΩ TO-220F
MIC-FM20NG N Channel/500/20A/300mΩ TO-220F
MIC-FN08NG N Channel/600V/8A/1200mΩ TO-220F
MIC-FN10NG N Channel/600V/10A/720mΩ TO-220F
MIC-FN12NG N Channel/600V/12A/600mΩ TO-220F
MIC-FO08NG N Channel/650V/8A/1300mΩ TO-220F
MIC-FO10NG N Channel/650V/10A/780mΩ TO-220F
MIC-FO12NG N Channel/650V/12A/650mΩ TO-220F


MOS driving circuit

MOSFET is widely used in switching power supply because of its low internal resistance and fast switching speed. The driver of MOSFET often chooses the appropriate circuit according to the parameters of power IC and MOSFET. The driving circuit of MOSFET for switching power supply is discussed below.

When using MOSFET to design switching power supply, most people will consider the on resistance, maximum voltage and maximum current of MOSFET. But most of the time, only these factors are considered. Such a circuit may work normally, but it is not a good design. More specifically, MOSFET should also consider its own parasitic parameters. For a certain MOSFET, its driving circuit, peak current of driver pin output, rising rate and so on will affect the switching performance of MOSFET.

When the power IC and MOS transistor are selected, it is very important to choose the appropriate driver circuit to connect the power IC and MOS transistor.

A good MOSFET Driver circuit has the following requirements:

(1) When the switch is opened instantaneously, the driver circuit should be able to provide enough charging current to make the voltage between the source and the gate of MOSFET rise to the required value quickly, so as to ensure that the switch can be opened quickly without high frequency oscillation of rising edge.

(2) During switching on, the driving circuit can ensure that the voltage between the gate and source of MOSFET is stable and reliable.

(3) The switching off instantaneous drive circuit can provide a path with the lowest impedance as far as possible for the fast discharge of the capacitor voltage between the gate and source of MOSFET, so as to ensure that the switch can be switched off quickly.

(4) The structure of the driving circuit is simple and reliable, and the loss is small.

(5) Apply isolation as appropriate.

The following describes the MOSFET driver circuits commonly used in several module power supplies.

1. Power IC drives MOSFET directly
Power IC direct drive is the most commonly used driving mode and the simplest driving mode. When using this driving mode, we should pay attention to several parameters and the influence of these parameters. First, check the manual of power IC, its maximum driving peak current, because different chips have different driving capabilities. Second, understand the parasitic capacitance of MOSFET. IC driving ability, MOS parasitic capacitance, MOS switch speed and other factors all affect the selection of driving resistance, so RG can not be infinitely reduced.

2. When the power IC driving capacity is insufficient
If the parasitic capacitance of MOS transistor is relatively large and the driving ability of power IC is insufficient, the driving ability of power IC needs to be enhanced in the driving circuit. Totem pole circuit is often used to increase the driving ability of power IC. This driving circuit is used to improve the current supply ability and quickly complete the charging process for the grid input capacitance charge. This topology increases the time needed to turn on, but reduces the turn off time. The switch can turn on quickly and avoid the high frequency oscillation of the rising edge.

3. Acceleration of MOS turn off time by driver circuit
The instantaneous drive circuit can provide a path with the lowest impedance as far as possible for the fast discharge of the capacitor voltage between the gate and source of MOSFET, so as to ensure that the switch can be turned off quickly. In order to quickly discharge the capacitance voltage between gate and source, a resistor and a diode are usually connected in parallel on the driving resistor, which reduces the turn off time and the loss at the same time. Rg2 is to prevent excessive current when switching off, and burn off the power IC.

4. Acceleration of MOS turn off time by driver circuit
In order to meet the drive of high-end MOS transistor, transformer drive is often used, sometimes transformer drive is also used to meet the safety isolation. The purpose of R1 is to suppress the LC oscillation between the parasitic inductance on the PCB and C1. The purpose of C1 is to separate DC and prevent the core saturation through AC.

Inquiry Us







Related Products

Alternative and equivalent for Fairchild FDMS7670 MOSFET DFN5*6-8-EP

Alternative and equivalent for Fairchild FDMS7670 MOSFET DFN5*6-8-EP

Alternative and equivalent for Vishay SiR472ADP MOSFET DFN5*6-8-EP

Alternative and equivalent for Vishay SiR472ADP MOSFET DFN5*6-8-EP

Alternative and equivalent for ST STU3LN62K3 MOSFET TO-251

Alternative and equivalent for ST STU3LN62K3 MOSFET TO-251

Alternative and equivalent for RENESAS NP83P06PDG MOSFET TO-263

Alternative and equivalent for RENESAS NP83P06PDG MOSFET TO-263

Alternative and equivalent for Unitpower UM3005 MOSFET SOP-8

Alternative and equivalent for Unitpower UM3005 MOSFET SOP-8

Alternative and equivalent for ANALOGPOWER AM7452NA MOSFET DFN5*6-8-EP

Alternative and equivalent for ANALOGPOWER AM7452NA MOSFET DFN5*6-8-EP

Alternative and equivalent for UTC 9NM65G-TF3-T MOSFET TO-220F

Alternative and equivalent for UTC 9NM65G-TF3-T MOSFET TO-220F

Alternative and equivalent for APEC AP9963GI-HF MOSFET TO-220F

Alternative and equivalent for APEC AP9963GI-HF MOSFET TO-220F

Alternative and equivalent for TOS TPH5200FNH MOSFET DFN5*6-8-EP

Alternative and equivalent for TOS TPH5200FNH MOSFET DFN5*6-8-EP

Alternative and equivalent for Fairchild FDS8949 MOSFET SOP-8

Alternative and equivalent for Fairchild FDS8949 MOSFET SOP-8

Alternative and equivalent for Vishay Si2336DS MOSFET SOT-23

Alternative and equivalent for Vishay Si2336DS MOSFET SOT-23

Alternative and equivalent for ON MMBF170L MOSFET SOT-23

Alternative and equivalent for ON MMBF170L MOSFET SOT-23

Product Categories

  • Infineon IRF / IRFR / IRL Series MOSFET Alternative Equivalent
  • Fairchild FQP / FQPF / FDD Series MOSFET Alternative Equivalent
  • AOS AO / AOD / AOI / AON Series MOSFET Alternative Equivalent
  • Other Brand MOSFET Alternative
  • MIC Standard MOSFET Model
  • MOSFET Typical Application
  • Package Outline Drawings

Links

MOSFET drawing

LatestPost

  • Application of MOSFET In E-cigarette
    Application of MOSFET In E-cigarette
    2020-07-06
  • Application of MOSFET In Battery Management System
    Application of MOSFET In Battery Managem
    2020-07-06
  • Application of MOSFET In Humidifier
    Application of MOSFET In Humidifier
    2020-07-06

Feedback

Contact Us

+86 755 61167757

[email protected]

9B2,TianXiang Building,Tianan Cyber Park, Futian,Shenzhen,China

MOBILE WEBSITE

en de fr mi ms cs ko co es fi el it lv mg nl pl pt ro ru sv mn sk tl zh-tw zh-cn ga ne sw sq ar ps be az da af da af et ht fa eu is te bs bn bg am ka gl gu hr hu id hi ku iw ky km kn lo si st lt lb mk my ny ha no ur sr sl ta th tg uk uz vi

Copyright © 2009-2022 MIC MOSFET by Circuit Ocean Internatinal Co.,Ltd All Rights Reserved.

  • Skype.
  • E-mail
  • Whatsapp
  • Inquiry